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Calculation approach for current–potential behaviour during pulse electrodeposition based on double-layer characteristics.

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Nickel electrodeposition from a Watts bath under high polarisation conditions is modelled as an equivalent electrical circuit. In a quasi-stationary state, electrolyte resistance and double layer parameters are measured using electrochemical impedance spectroscopy. The charge transfer resistance of anodic and cathodic electrode double layers are independent of current density. Overpotentials over the double layer are current density independent. For pulse on/off times less than 10 ms, the system behaviour is primarily determined by double layer characteristics. The role of cell geometry and co-evolution of gas bubbles is considered. The role of diffusion is analysed using the Nernst equation. Mathematical equations representing the electrolyte half cell are shown. The data and model are used to interpret pulse electrodeposition. 40 refs

Calculation of a Change in the Microcontour during Electrochemical Treatment of a Surface.

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100;93405. Electropolishing then chromium plating of a sandblasted surface for textile machinery etc, where changes in surface roughness with time, i.e topography, were calculated.

Calculation of apparent activation energy for the deposition of TEOS- silica films by PECVD

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Calculation of apparent electrical resistivity of metallic open cell foams by dodecahedron model.

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MST

Calculation of Bypass Currents in Molten Salt Bipolar Cell

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JAE Study on bipolar aluminium smelting cells. 39 refs

Calculation of continuous coil anodising cells containing floating electrodes

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Boundary element method current computer modelling is used to model primary & secondary current distribution. Normal & floating anodising cells are compared. 5 refs

Calculation of Current Density Distribution & Terminal Voltage for Bipolar Cell Stacks.

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JES Analogue circuit is shown & equation set out to represent the overall situation and effect of parameters of individual cells on [parasitic (leakage) currents. Effect of these on leakage currents in "n"th cell is plotted. App. shows calculation of electrolyte temperature in the cell. Chlorate cells are basis for the model. 14 refs.

Calculation of Current Density Distribution at the Electrode of a Slot Cell

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Theoretical calc'n of current dist'n at a slot cell as described by Mohler. Box A.

Calculation of Current Distribution & Electrode Shape Change by the Boundary Element Method

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JES 104 41867 Engl. Title method was used with iteration method esp. in context of electrodep'n and electrochemical machining. Model involved both primary & secondary current dist'ns. In electrorefining of Cu, predicted and actual data are compared while in ECM, the levelling effect is modelled.

Calculation of current distribution and surface finishing

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Calculation of Current Distribution at Electrodes involving Slots

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Calculation of primary & secondary current dist'n at narrow slots. 6 refs.

Calculation of Electrode Ohmic Resistance Effects in Tube Plating

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JES Theoretically calculated model for electrodeposition onto the inside wall of a tube, using a central co-axial anode, based on a problem involving plating of uranium inside a pipe from molten salt. 17 refs.

Calculation of heat equilibrium in anodizing architectural aluminium profile

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Calculation of heat absorbed from 4 sources by anodizing bath is shown, based on typical bath with annual processing capacity of 1,000 tons, providing referential basis of correct choice of refrigerators. Combinations of anodizing devices and refrigerators in several foreign factories are presented.

Calculation of intrinsic stress by creep deformation of a silicon substrate on chemical vapor deposited diamond films

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DIAM Diamond films were deposited on p-type Si substrate by hot-filament CVD. Intrinsic stress of film was observed by creep deformation of Si substrate, and intrinsic residual stresses of films was deduced using power-law creep equation. Thermal strain and creep strain in Si substrate were subtracted from total ex situ measured strain. Results showed that creep deformation of Si substrates must be considered when residual stresses are measured by curvature method, esp. where film is thick, or when temp. or stress conditions are high. New approach to measuring intrinsic stress from creep deformation of substrates is proposed.

Calculation of ion concentrations close to electrodes and limiting diffusion currents in electrochemical profiling problems

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