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1709 results. per page « 5 6 7 8 9 10 11 12 13 14 15 »

Gamma prime phase-containing nickel aluminide coating.

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Intermetallic coating composition to protect in high temperature oxidising environments such as gas turbine combustors, incl. gamma prime & beta NiAl phases in set proportions.

GaN Films deposited on ITO coated glass.

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GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA).

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MCP

GaN-based core-shell nanowires sputtered with Pd target and their annealing characteristics.

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Gap fill and film reflow capability of subatmospheric chemical vapor deposited borophosphosilicate glass

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JES Presents systematic process characterisation of subatmospheric CVD (SACVD) borophosphosilicate glass (BPSG). Effects of deposition pressure, ozone concn., ozone flow, and dopant concn. on film reflow profile and film properties are presented. Decrease in deposition pressure from atmos. conditions to 200Torr provides > 200% increase in SACVD BPSG deposition rate without affecting film quality. P is incorporated in stable form of phosphoric oxide at all deposition pressures. Higher ozone concns. improve SACVD BPSG film reflow and film properties. More over, at higher dopant concns., both film shrinkage and stress-temp. hysteresis decrease.

Garnet polycrystalline film for magneto-optical recording medium

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Garnet polycrystalline film for magneto-optical recording medium comprises 2 layers of polycrystalline garnet based on bismuth, a rare earth, iron and oxygen and gallium, aluminium or indium where 2 adjacent layers having lattice constants different by at least +/-0.3%, and aver. crystal grain diam. of 1 layer being smaller than other layer and more than 1µm.

Garnet safely removes coatings from aluminium

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The background, containment, blasting and coating specification are discussed in relation to the removal of a 1 mm thick coating from a sensitive aluminium substrate on th U.S.S Yorktown.

Gas absorption properties of ionic liquids and its applications to gas separation technology.

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Gas aggregation nanocluster source - Reactive sputter deposition of copper and titanium nanoclusters.

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Gas and plasma nitriding pretreatments of steel substrates before CVD growth of hard refractory coatings

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Vapor phase nitriding before deposition of representative metallurgical coatings was investigated. Gas nitriding of 2 steel substrates (38 CD 4 and 30 NCD 14) was achieved in MOCVD reactor using ammonia - hydrogen - helium as reactive gas mixtures. Pretreatment was performed for MOCVD of V-C-N type coatings. Similarly microwave-plasma nitriding by nitrogen/Ar mixtures was applied prior to deposition of silicon carbide based films by microwave-plasma CVD. Nitriding pretreatment enhances adhesion of plasma-CVD SiC(H) and MOCVD V(C,N) coatings unlike MOCVD VN-type films.

Gas barrier film

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Gas barrier film

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Film comprising thermoplastic resin substrate with gas barrier coating comprising water soluble or dispersible high polymer and inorg. stratified particles.

Gas barrier film

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Gas barrier film comprises plastic film and thin film of composite mixture of =2 of Si oxide, Al oxide, Mg oxide and Ca oxide with selected spec. gravity.

Gas barrier film and method for producing same.

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Gas barrier film comprising a mixed deposition layer composed of a metal and a metal oxide on at least one side of a polymer film base. This gas barrier film is characterized in that the integral value ratio (S(MeO)/S(Me) in the mixed deposition layer is 1.5-100 when the integral value of the XPS spectrum of the metal in the mixed deposition layer is S(Me) and the integral value of the XPS spectrum of the metal oxide in the mixed deposition layer is S(MeO), and a resin layer formed by using a polycarboxylic acid solution is arranged on at least one side of the mixed deposition layer.

Gas Barrier Film.

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Gas barrier film having excellent gas barrier property while retaining the film thickness at a predetermined thickness, having a silicon oxide film formed by the plasma CVD method on the one side or both sides of a base material is provided. The silicon oxide film is characterized in that the film is comprised of the rate of components that the number of Oxygen atoms is from 170 to 200 and the number of Carbon atoms is 30 or less to the number of Si atoms of 100, and that further the film has a peak position of IR carbon atoms band based on the stretching vibration of Si-O-Si that exist between 1055 and 1065 cm<-1>.