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Raman abd XPS Studies of DLC Films Prepared by a Magnetron Sputter-Type Negative Ion Source.

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Raman and X-ray studies of polycrystalline CVD diamond films

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Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapour deposition-tungsten disulphide thin films

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Raman scattering studies of amorphous Si(x)Ge(1-x):H alloy films produced by hot-filament assisted chemical vapour deposition technique

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Raman spectroscopy as a tool to study cubic Ti-C-N CVD coatings.

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Raman spectroscopy investigations of TiBxCyNz coatings deposited by low pressure chemical vapor deposition.

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SURF non-stoicheometric.

Raman Spectroscopy of Hopeite & Phosphophyllite in Phosphate Coating

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Raman spectroscopy of organic species incorporated into electrodeposited gold layers

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Both in-situ and ex-situ Raman spectroscopy is reported of Au deposited from cyanide bath. Spectra show both residual adsorbed CN and benzyldimethylphenylammonium species. The effects of polarisation and use of oxidation-reduction cycles is also reported. 7 refs

Raman spectroscopy study of silicon etching in aqueous tetramethylammonium hydroxide

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JES Analysis of etchant products provide evidence for mechanism hypothesis. 11 refs

Raman studies of diamond film growth on fuse-silica substrates by a multi-step process

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Raman spectra and scanning micrographs are implemented to investigate performance of diamond film growth on Si and fuse-silica substrates by 2- and 3-step processes. Quality for films grown on Si substrates is satisfied by both steps, while for fuse-silica plates only 3-step process can yield uniform and fertile films.

Raman study of diamond films deposited by MPCVD: effect of the substrate position

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Diamond is deposited from 100 sccm H2/0.5 sccm CH4 or 100 sccm H2/4 sccm CH4/2 sccm O2 by microwave plasma assisted CVD either in middle of plasma ball or in remote position at level of bottom wall of wave guide.

Ramseier display their new powder coating booth technology

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Swiss mfr displays their rapid changeover powder booth, also adapted for electrostatic applications. Interview with senior management on p. 27

Random approach to peening coverage in ultrasonic shot-peening

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Ultrasonic shot peening is new process using calibrated peening with hard balls propelled by walls vibrating at 20 000 Hz. As in conventional shot peening, fully peened surface coverage is required. However, it is difficult to determine coverage ratio experimentally. Statistical approach, derived from random set theory, was used to establish relationships between coverage, impact superficial density, and impact crater area. Random model was tested with different materials treated by ultrasonic shot peening. Individual crater diameter measurements and local repartition analysis were made using quantitative image analysis. Calculations provide mean number of impacts on surface for coverage ratio. Statistical approach can also be applied to treatment involving impact flow.

Random Macropore Formation in p-Type Silicon in HF-Containing Organic Solutions Host Matrix for Metal Deposition.

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JES

Random Pitting of Anodised Aluminium

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Answer to query where random pitting is accompanied by longer anodising times needed to form a given thickness. Suggestion that chloride contamination at or above 150 mg/litre may be problem, this causing random star-shaped pits which are deep and appear black.