Register

Create your own FREE account with surfacequery.com and we will contact you with more details about a subscription or a one-off search.

More details…

Search

Here you can perform a record search by entering keywords.

You can use the special keywords AND, OR and NOT in between words to refine your search.

This search also supports the wildcard character * and the use of quotes.

Subscription or one-off search

With a subscription or a one-off seach, the "author", "journal", "source", "date", "volume" and "page" details are presented along with the "abstract titles" and "anstracts".

More details…

5022 results. per page « 1 2 3 4 5 6 7 8 9 10 11 »

Radiation drying

Relevancy:  

Focus on Institute for Surface Modification in Leipzig, home of long-time R & D on electron, ion & photon radiation. Update on combined ultra-violet & electron beam curing technology, now close to market with examples of very high cure rates possible using this. Equipment is shown using excimer radiation for matt finishing paints with details of its performance - up to 50 metre/min pass rate.

Radiation effects on wet- and dry-oxide metal-oxide semiconductor devices

Relevancy:  

Effect of 60 Cobalt source irradiation up to doses of 1.5 MRad on properties of metal-oxide-SC (MOS) transistors and MOS capacitors with different gate oxides was investigated. Gate oxides were obtained by thermal oxidation of Si in water vapour. Comparison between radiation hardness of wet and dry gate oxide in dry O2 is presented. Results show that properties of MOS devices based on wet oxides are affected more strongly by radiation than devices based on dry oxides. Dependence of positive charge on radiation dose is 1st-order reaction equation. Strong linear correlation exists between degradation of low field mobility of MOS transistors and logarithm of positive oxide charge incorporation during irradiation for wet-oxide samples.

Radiation effects on wet- and dry-oxide metal-oxide semiconductor devices

Relevancy:  

Effect of 60 Cobalt source irradiation up to doses of 1.5 MRad on properties of metal-oxide-SC (MOS) transistors and MOS capacitors with different gate oxides was investigated. Gate oxides were obtained by thermal oxidation of Si in water vapour. Comparison between radiation hardness of wet and dry gate oxide in dry O2 is presented. Results show that properties of MOS devices based on wet oxides are affected more strongly by radiation than devices based on dry oxides. Dependence of positive charge on radiation dose is 1st-order reaction equation. Strong linear correlation exists between degradation of low field mobility of MOS transistors and logarithm of positive oxide charge incorporation during irradiation for wet-oxide samples.

Radiation effects on wet- and dry-oxide metal-oxide semiconductor devices

Relevancy:  

Effect of isotope (60)Co source irradiation up to doses of 1.5 MRad on properties of metal-oxide-SC (MOS) transistors and MOS capacitors with different gate oxides was investigated. Gate oxides were obtained by thermal oxidation of Si in water vapour. Comparison between radiation hardness of wet and dry gate oxide in dry O2 is presented. Results show that properties of MOS devices based on wet oxides are affected more strongly by radiation than devices based on dry oxides. Dependence of positive charge on radiation dose is 1st-order reaction equation. Strong linear correlation exists between degradation of low field mobility of MOS transistors and logarithm of positive oxide charge incorporation during irradiation for wet-oxide samples.

Radiation exposure reduction by forming oxide film after chemical decontamination.

Relevancy:  

 

Radiation hardening of polytetrafluoroethylene against chemical etching

Relevancy:  

Exposure of fluoropolymer to Mg K-alpha X-rays for as little as 10 mins. produced permanent hardening towards chemical etching. Low MW materials are formed. Proposal that branching and/or cross-linking are responsible for etching resistance is supported by resistance of unirradiated, fluorinated ethylene/propylene copolymer.

Radiation hardness of polycrystalline diamond thin films irradiated with 100 MeV iodine (7+) ions

Relevancy:  

Polycrystalline diamond thin films grown by hot-filament CVD process were irradiated with 100 MeV I(7+) ions. As-deposited and irradiated films were characterised using micro-Raman spectroscopy, glancing angle X-ray diffraction (XRD), resistivity measurements and scanning electron microscopy (SEM) techniques. Defects and non-diamond carbon phases were seen to develop on irradiation up to fluence of 1.3 x 10E14 ions/sq.cm. Damage to films was critically dependent on crystalline quality. Changes were correlated with H concns. in films as studied by elastic recoil detection analysis.

Radiation induced dry etching apparatus

Relevancy:  

 

Radiation Induced Interfacial Reactions on Heat Transfer Surfaces used in Nuclear Energy Equipment.

Relevancy:  

 

Radiation or convection?

Relevancy:  

Comparison of types of reflow soldering equipment. IR is shown to be superior for small plant.

Radiation or convection?

Relevancy:  

Comparison of types of reflow soldering equipment. IR is shown to be superior for small plant.

Radiation Sensitive Electroless Plating Sensitiser

Relevancy:  

 

Radiation-cure electrically conductive coating

Relevancy:  

Incl. dispersion of electrically conductive particles & electrically conductive polymer.

Radiation-cured electrically conductive coatings

Relevancy:  

45 to 90% polymerisable conductivity enhancing co-monomer & polymerisable ethylenically unsaturated precursor with quaternary ammonium anion.

Radiation-cured paints make gains

Relevancy:  

Reports market growth of title paints which, although almost 30 years old, are only now really taking off. They can also be used for temperature-sensitive substrates such as wood or plastic. Market statistics are 100,000 tonnes p.a in 1995 and data on VOC solvent emissions saved by their use, are also given, as are details of ultra-violet light curing procedure.