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Tapered windows in SiO2, Si3N4 and polysilicon layers by ion implantation

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JES In integrated circuit production, tapered windows are important of good step coverage of subsequent deposited layers. Implantation of Ar and As ions into SiO2, Si3N4 and polysilicon layers show window walls can be reduced. Slope angle is determined by ratio of etch rates of undamaged region to damaged top region of layer. Depending on ion species, ion dose, ion energy, and etching conditions, minimum angles of c. 10° could be achieved in layers.

Tappan Zee Bridge programme shifts to life-cycle maintenance

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New York State maintenance programme for bridge over Hudson River c. 13 miles north of New York is described, considering coatings selection, maintenance, aligning programme with plans for life-cycle costing, budgeting, inspection, etc. Bridge is combination of girder, deck truss and through-truss design and is c. 3 miles long.

Tappet for Internal Combustion Engine.

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Valve lifter for an automotive internal combustion engine includes a main body formed of one of an aluminium alloy and an iron-based alloy as a base material and having a top surface and a side surface which are respectively in slidable contact with opposite members in presence of at least one of a lubricating oil and a lubricant. Additionally, a hard carbon thin film is formed on the main body to cover the top surface and the side surface, the hard carbon thin film containing hydrogen atom in an amount of not more than 1 atomic %.

Tapping mode atomic force microscopy analysis of growth process of electroless nickel phosphorus films on non-conducting surfaces

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JES Prev. studies of title system, used TEM & STM (scanning tunnelling) microscopy & present study is follow-on with title technique. Atomic scale images are shown & graphs plot thickness vs. RMS surface roughness or scaled thickness vs. roughness. Results are used to gain insight into nucleation & growth process & factors affecting this. 27 refs

Target and dark space shield for physical vapour deposition system

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Target for PVD system comprises central region to be sputtered with edge having inclined sidewall connecting 1st to 2nd corner; flange radially extending from central region at 2nd corner, with support for target; 1st corner being further from centre of central region than 2nd corner where 1st corner forms overhang which shadows 2nd corner, edge and flange, to impede deposition on inclined sidewall.

Target arrangement

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Target arrangement with circular plate, magnetron for mounting the target arrangement and coating series of circular disc-shaped workpieces using magnetron source.

Target assembly for coating a magnetic recording medium

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Target assembly for use in depositing, on magnetic recording medium, protective overcoat which extends across annular inner landing zone and date zone.

Target component

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Target component for cathode sputtering inorganic ceramic material having m.pt. >300°C.

Target for a sputtering source.

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Target for a sputtering source can be subdivided into a plurality of exchangeable target segments. Each target segment contains coating material, wherein each target segment borders on at least two adjacent target segments), wherein each target segment is connectable to a base body by means of at most one securing means..

Target for Arc Ion Plating and Method of Manufacturing the same

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Target for Cathode Discharging Arc Ion Plating and Method of Manufacturing the same.

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Target for cathode sputtering

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Target for cathode sputtering based on hot pressed or isostatically hot pressed In oxide/Ti oxide powder, with density more than 95% of theoretical and with sub-stochiometric oxide content.

Target for cathode sputtering

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Target for cathodic sputtering

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In target formed of hot pressed or hot isostatic-pressed indium oxide/tinn oxide powder with min. density 95% of theoretical and substoichiometric O content, target has min. of 90% wt crystalline phase formed as solid soln and powder has aver. grain size of 2-20µm.

Target for cathodic sputtering device for production of thin films

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