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Wafer Plating Apparatus.

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Face-down plating cell with grooves for air-venting.

Wafer Plating Device

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Uses needle electrodes to charge semiconductor wafer, air bag to hold it, said air bag being inflated or deflated to release wafer.

Wafer plating device

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After uneven plating onto wafer surface, electrodes are positioned close to required area to create electrical potential field which can anodically strip excess metal.

Wafer plating machine with sectioned anode

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Separately addressable sectioned anode compensates for nonuniform plating due to resistance of thin seed layer.

Wafer plating process

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Simultaneous non-contact electroplating & planarizing of semiconductor wafers using bipolar electrode assembly.

Wafer plating process

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Uses variable currents & agitation (mass transfer) to obtain uniform thickness layer.

Wafer polisher head for chemical mechanical polishing and endpoint detection

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Polishing head comprises flexible plate. actuators each with d. c. motor and moving part plate to exert force on flexible plate; reaction plate for fixing actuators. motor driver; packing plate comprising attachments packed together; load cells, each sandwiched between flexible plate and attachment for sensing force and outputting 1st signals; flexible carrier plate fixed on bottom of head for carrying packing plate; vacuum source; and microprocessor for controlling motor driver.

Wafer polishing with improved end point detection

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Wafer separating and cleaning apparatus

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Wafers are transported, sliced from ingot by wire saw to water to separate them one by one from slice base mounting beam; then to cleaning; to detecting their shape; and collected one by one into cassette.

Wafer Support Apparatus for Electroplating Process and Method for using the same.

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Cell for electroplating semiconductor wafers which have peripheral seal, using sacrificial anodes.

Wafer temperature control for thin film deposition

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Wafer temperature dependence of the vapor-phase HF oxide etch

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JES When HF/H2O vapor derived from azeotropic solution of HF/H2O was used to etch various oxides of Si, etch rates had qualitatively similar dependence on wafer temp. However, sensitivities of dependence varied greatly among different oxides. Consequently, etch selectivities among different oxides could be controlled by changing wafer temp. In particular, phosphosilicate glass to thermal oxide etch selectivity increased from 18:1 to at least 2900:1, when temp. was raised from 25°C to c. 50°C.

Wafer temperature dependence of the vapor-phase HF oxide etch

Relevancy:  

JES When HF/H2O vapor derived from azeotropic solution of HF/H2O was used to etch various oxides of Si, etch rates had qualitatively similar dependence on wafer temp. However, sensitivities of dependence varied greatly among different oxides. Consequently, etch selectivities among different oxides could be controlled by changing wafer temp. In particular, phosphosilicate glass to thermal oxide etch selectivity increased from 18:1 to at least 2900:1, when temp. was raised from 25°C to c. 50°C.

Wafer temperature dependence of the vapor-phase HF oxide etch

Relevancy:  

JES When HF/H2O vapor derived from azeotropic solution of HF/H2O was used to etch various oxides of Si, etch rates had qualitatively similar dependence on wafer temp. However, sensitivities of dependence varied greatly among different oxides. Consequently, etch selectivities among different oxides could be controlled by changing wafer temp. In particular, phosphosilicate glass to thermal oxide etch selectivity increased from 18:1 to at least 2900:1, when temp. was raised from 25°C to c. 50°C.

Wafer temperature dependence of the vapor-phase HF oxide etch

Relevancy:  

When HF/H2O vapor derived from azeotropic solution of HF/H2O was used to etch various oxides of silicon, etch rates had qualitatively similar dependence on wafer temp. However, sensitivities of dependence varied greatly among different oxides. Consequently, etch selectivities among different oxides could be controlled by changing wafer temp. In particular, phosphosilicate glass to thermal oxide etch selectivity increased from 18:1 to at least 2900:1, when temp. was raised from 25°C to c. 50°C.