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X-Ray Diffraction for Measurement of Degree of Alloying of Hot Dip Galvanised Coatings
X-ray diffraction measurement of residual stress and crystal orientation in Au/NiCr/Ta films prepared by plating.
SURF Au/NiCr/Ta films were prepared by plating and then annealed at 400 °C in Ar gas for an hour. The Au diffraction peak positions including incidence angles 0°, 15°, 30°, and 45° were measured by a glancing incidence X-ray diffraction (GIXRD) method. Residual stresses were then calculated using the sin2? method. The results indicate that the residual stress in the as-deposited Au/NiCr/Ta films was about 50 MPa, but was decreased down to - 5 MPa in average after samples annealing. The XRD analysis on crystal orientation shows that only the diffraction peaks of Au were found. There are no alloying phases in the plating Au film, and the interlayer of NiCr and Ta is too thin to be detected by the conventional XRD. The XRD also revealed that the films are highly textured with Au-(111) or a mixture of Au-(111) and Au-(200) orientation, and the (111)/(200) intensity ratio decreases after samples annealed.
X-ray diffraction method of evaluating the wear resistance of metals in gas-abrasive machining
Results of X-ray diffraction study of structural changes in surface layers of D16T alloy during gas-abrasive machining are given, and periodic character of change in width of diffraction lines indicating fatigue nature of damage to test material is brought out. Number of cycles to damage and connection between this number and particle propagation rate is established.
X-Ray Diffraction of Electrodeposited Iron from Jet Plating
68 18052 Russ. Abstr n/avail.
X-ray diffraction of high nitrogen face centred cubic phase formed on nitrogen modified austenitic stainless steel.
X-ray diffraction studies of epitaxial Pb(Zr,Ti)O3 films prepared by chemical solution method
MCP Epitaxial Pb(Zr,Ti)O3 thin films prepared on various substrates by dipping-pyrolysis process were investigated using asymmetric X-ray diffraction 2 / scans. Epitaxially grown films heat-treated at 750°C on Nb-doped SrTiO3(100) and LaAlO3(100) were found by reciprocal- space map analysis to consist of c-axis-oriented tetragonal phase.
X-ray diffraction study of epitaxial lithium tantalate films deposited on (0001) sapphire wafers using r.f. diode sputtering
Epitaxial thin films of Li tantalate were r.f. diode sputtered onto (0001) single-crystal sapphire substrates. As Li/(Li + Ta) ratio decreased < 0.5, LiTaO3 (LTO type) c-axis lattice constant increased. Additional Li tantalate phase coexists with LTO-type phase at Li/(Li + Ta) ratio c. 0.4. WhenLi/(Li + Ta) ratio becomes close to 0.25, additional phase is only phase observed in sputter-deposited thin film. Tilt-angle X-ray diffraction results confirmed that additional phase is ilmenite-type (IL type) Li(1-x) TaO3.
X-Ray Diffraction Study of Preferred Orientation of Electrodeposited Nickel
Detailed study of Watts Ni deposit. 27 refs
X-Ray Diffraction Study of Pulse Plated Silver
89 170837 Russ. From Ref Zh. Khim. (1978) Abstr 13L 264. The study was aimed at preferred orientation.
X-Ray Diffraction Study of Stacking Faults in Electroplated Silver Films
Ag was electrodep'd onto copper foil & X-ray meas'ts made before & after heat treatment. 9 refs.
X-Ray Diffraction Study of Structure of Di- & Trichromate Ions in Chromium Plating Baths
Structure of complexes present in Cr plating baths are studied. 18 refs.
X-ray diffractometry analysis of r.f.-magnetron-sputtered chromium/chromium nitride coatings
SURF Effect of N content on microstructure of Cr-based coatings deposited by r.f. magnetron sputtering was studied. Cr, Cr2N and CrN were major phases resp., for 5, 34 and 50 at.% by recording /2 and glancing incidence (1°) scans. Between these crystallographic structures, there is a peak broadening with poor intensities interpreted as mixtures of Cr, Cr2N and/or Cr(N) phases. Influence of N on pref.crystal orientation of films was investigated. Highly textured Cr(110) and CrN (111) were evidenced, and texture was function of N content in sputtering atmos.
X-ray double crystal and X-ray topographic characterisation of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminium nitride/sapphire substrates
Structure, strain and defects in epitaxial SiC thin films on aluminium nitride/alumina, Si, TiC and 6H-SiC substrates were analysed. SiC thin films were confirmed to be epitaxials with Zn blend structure when grown on Si, TiC and vicinal 6H-SiC, and wurtzite 6H polytype structure when grown on AlN/alumina. Dislocation densities in SiC films are in order of 10E8 to 10E11 and are comparable. Stress agrees with theoretical calculated from thermal expansion coeff. mismatch between film and substrate. X-ray rocking curves and X-ray topographs suggest that considerable amount of defects were generated in Si substrates during thin film growth process whereas sapphire substrates remain defect free.
X-ray elastic strain analysis of compressed gold thin film on polymer substrate.
X-ray elasticity constants and residual stresses of electrodeposited thin layers.
The x-ray elasticity consts. (XEC) and residual stresses were detd. for electrodeposited nickel layers on steel C45 and piston alloy AlSi12CuMgNi Cu layers on steel X2CrNiMoN 22-5 and Ag layers on brass CuZn4O. The equation of Hauk and Kockelmann (1977) of the XEC of composites under the assumption of homogeneous elongation in uniaxial tensile deformation was confirmed for various orientations. The exptl. detd. XEC of the composites were not affected by the weak textures of the thin electrodeposited layers and were close to the calcd. XEC of the substrates.